Process for making a semiconductor MOS transistor

Details Process for making a semiconductor MOS transistor Process for making a semiconductor MOS transistor

1997-07-23

1998-11-24

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438301, 438585, H01L 21336

Patent

active

058406115

ABSTRACT:
The present invention provides a process for forming an MOS semiconductor device having an LDD structure, which includes a forming a gate electrode by first etching a conductive layer to a certain depth by an RIE process and by second etching the conductive layer by an isotropic plasma etching process. In forming the source/drain of the device, an n.sup.+ source/drain and an n.sup.- source/drain are formed in a sequential manner. The gate line first is formed with its width over-sized compared with its channel length, and finally is formed to its final size.

REFERENCES:
patent: 3906620 (1975-09-01), Anzai et al.
patent: 4113515 (1978-09-01), Kooi et al.
patent: 4445266 (1984-05-01), Mai et al.
patent: 4599118 (1986-07-01), Han et al.
patent: 5427971 (1995-06-01), Lee et al.

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