Process for making a semiconductor device using partial etching

Details Process for making a semiconductor device using partial etching Process for making a semiconductor device using partial etching

2011-03-22

2011-03-22

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S706000, C438S745000, C257SE21396

Reexamination Certificate

active

07910442

ABSTRACT:
A method including partially etching a first portion of a first layer, wherein the first layer is a conductive layer, is provided. The method further includes removing at least a portion of a second layer. The method further includes completing etching of said first portion of the conductive layer so that said first portion of the conductive layer is removed. The method further includes completing formation of the semiconductor device.

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S.C. Song, et al., “Highly Manufacturable 45nm LSTP CMOSFETs Using Movel Dual High-k and Dual Metal Gate CMOS Integration,” Symposium on VLSI Technology Digest of Technical Papers, 2006.

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