Process for low temperature atomic layer deposition of RH

Details Process for low temperature atomic layer deposition of RH Process for low temperature atomic layer deposition of RH

2005-09-13

2005-09-13

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S239000, C438S253000, C438S393000, C438S680000, C438S686000

Reexamination Certificate

active

06943073

ABSTRACT:
A method for the formation of rhodium films with good step coverage is disclosed. Rhodium films are formed by a low temperature atomic layer deposition technique using a first gas of rhodium group metal precursor followed by an oxygen exposure. The invention provides, therefore, a method for forming smooth and continuous rhodium films which also have good step coverage and a reduced carbon content.

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patent: 2002/0110991 (2002-08-01), Li

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