Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1991-11-25
1993-03-30
Hearn, Brian E.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
437108, 437112, 437 13, 437248, 437939, 437946, 148DIG24, 148DIG17, 156654, B44C 122
Patent
active
051980711
ABSTRACT:
A process for the formation of an epitaxial layer on a semiconductor wafer is described which inhibits the formation of thermal stress in the semiconductor wafer such as a silicon wafer, during the formation of such an epitaxial layer thereon. In one aspect, such thermal stress is inhibited during the deposition of the epitaxial material by initially reducing the deposition rate to less than 1 .mu.m per minute or lower until the epitaxial layer reaches a thickness of from about 2 to about 30 .mu.m. In another aspect of the invention, any bridge materials formed between the wafer and the wafer support, during formation of the epitaxial layer, is removed before the wafer is cooled, i.e., before such bridge materials can induce thermal stress in the wafer during the cooling of the wafer, by post etching the wafer with HCl etching gas after the epitaxial deposition.
REFERENCES:
patent: 4256520 (1981-03-01), Koike et al.
patent: 4659400 (1987-04-01), Garbis et al.
patent: 4728389 (1988-03-01), Logar
patent: 4745088 (1988-05-01), Inoue et al.
patent: 4780174 (1988-10-01), Lan et al.
patent: 4874464 (1989-10-01), Goodwin et al.
patent: 4986215 (1991-01-01), Yamada et al.
patent: 5011789 (1991-04-01), Burns
Riley Norma
Scudder Lance
Applied Materials Inc.
Hearn Brian E.
Nguyen Tuan
Taylor John P.
LandOfFree
Process for inhibiting slip and microcracking while forming epit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for inhibiting slip and microcracking while forming epit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for inhibiting slip and microcracking while forming epit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1278721