Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-11-18
1998-08-18
Fourson, George R.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438763, 438958, 438216, 438261, 438902, H01L 21318
Patent
active
057958211
ABSTRACT:
A method for improved adhesion between dielectric material layers at their interface during the manufacture of a semiconductor device, comprising operations for forming a first layer (1) of a dielectric material, specifically silicon oxynitride or silicon nitride, on a circuit structure (7) defined on a substrate of a semiconductor material (6) and subsequently forming a second layer (3) of dielectric material (silicon oxynitride or silicon nitride particularly) overlying the first layer (1). Between the first dielectric material layer and the second, a thin oxide layer (2), silicon dioxide in the preferred embodiment, is formed in contact therewith. This interposed oxide (2) serves an adhesion layer function between two superimposed layers (1,3).
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Bacchetta Maurizio
Bacci Laura
Zanotti Luca
Carlson David V.
Fourson George R.
Iannucci Robert
SGS-Thomson Microelectronics S.R.L.
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