Process for improving device yield in integrated circuit fabrica

Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Recessed oxide by localized oxidation

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438289, 438449, 438530, H01L 2176

Patent

active

059500964

ABSTRACT:
In the fabrication of an integrated circuit, undesirable bird's beak pull back due to damage caused during ion implantation is alleviated by means of rapid thermal annealing step prior to chemical etching.

REFERENCES:
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patent: 5650350 (1997-07-01), Dennison et al.
patent: 5686346 (1997-11-01), Duane
patent: 5744391 (1998-04-01), Chen
patent: 5861334 (1999-01-01), Rho

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