Process for high voltage superjunction termination

Details Process for high voltage superjunction termination Process for high voltage superjunction termination

2008-04-08

2008-04-08

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S296000, C438S435000, C438S436000, C438S224000, C438S443000, C257SE21548

Reexamination Certificate

active

07354818

ABSTRACT:
A method of manufacturing a semiconductor device having an active region and a termination region includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has an active region and a termination region surrounding the active region. The first main surface is oxidized. A first plurality of trenches and a first plurality of mesas are formed in the termination region. The first plurality of trenches in the termination region are filled with a dielectric material. A second plurality of trenches are formed in the termination region. The trenches of the second plurality of trenches are filled with the dielectric material.

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