Process for generating a hard mask for the patterning of a...

Details Process for generating a hard mask for the patterning of a... Process for generating a hard mask for the patterning of a...

2007-05-29

2007-05-29

Huff, Mark F. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S313000, C430S316000, C427S096200, C427S160000

Reexamination Certificate

active

10970483

ABSTRACT:
A process for generating a hard mask for the patterning of a first layer includes applying a second layer, which includes carbon, to the first layer that is to be patterned. A third layer, which includes silicon and carbon, is spun onto the second layer and an organic antireflection coating layer that is to be used with an overlying photoresist layer patternable using 193 nm technology, is appllied to the spun-on third layer.

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patent: 2002/0128410 (2002-09-01), Jung et al.

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