Process for forming vias, and trenches for metal lines, in multi

Details Process for forming vias, and trenches for metal lines, in multi Process for forming vias, and trenches for metal lines, in multi

1998-06-15

2000-03-14

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

438702, 438740, 438743, 438744, H01L 21311

Patent

active

060372621

ABSTRACT:
A process is disclosed for forming vias and trenches in two separate dielectric layers, which may be separated by an etch stop, while avoiding the etch mask stress complicated resist masks, or high aspect ratio openings of the prior art. A first dielectric layer 10 is formed over an integrated circuit structure 2 on a semiconductor substrate, and a thin second dielectric layer 20 is formed over the first dielectric layer. A first resist mask, is formed over the second dielectric layer, and the first and second dielectric layers are etched through to form one or more vias 18, 28 extending through both the first and second dielectric layers. The first resist mask is then removed and a third dielectric layer 70, having different etch characteristics than the second dielectric layer, is deposited over the structure. This third dielectric layer, which may comprise the same material as the first dielectric layer, is applied to the structure as a low step coverage, nonconformal coating layer which preferably does not completely fill the one or more vias already formed in the first and second dielectric layers. A second resist mask is then applied over the third dielectric layer and the third dielectric layer is etched through to the underlying second dielectric layer to form the desired trench openings 78, with the second dielectric material acting as an etch stop, and also as an etch mask for removal of any of the third dielectric layer material which has deposited in the via(s) previously formed in the first and second dielectric layers.

REFERENCES:
patent: 5466639 (1995-11-01), Ireland
patent: 5753967 (1998-05-01), Lin
patent: 5897375 (1999-04-01), Watts et al.
patent: 5920790 (1999-07-01), Wetzel et al.

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