Process for forming self-aligned silicide

Details Process for forming self-aligned silicide Process for forming self-aligned silicide

1997-07-01

1999-04-06

Quach, T. N.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438592, 438655, 438683, H01L 21335

Patent

active

058917853

ABSTRACT:
A process for forming self-aligned silicide which is suitable for high-integrity processes after applying planarization technology. The present invention can protect the self-aligned silicide from being over-etched during subsequent contact etching process by means of forming a thicker silicide layer on the positions with shallower contact windows. At first, a polysilicon layer and a titanium layer are suquentially formed on a substrate having a field oxide, and defined to form a gate in an active region and a polysilicon line on the field oxide with titanium thereon. Then, impurities are implanted to form an LDD, an insulating layer is deposited and etched back to form a sidewall spacer of the gate and polysilicon line, and source/ drain regions are formed on the sides of the gate. After source/drain regions are formed, another titanium layer is formed so that titanium on the gate and polysilicon line is thicker than that on other regions. Accordingly, self-aligned silicide can be achieved by activating the reaction of titanium and silicon and selectively removing unreacted titanium.

REFERENCES:
patent: 4587718 (1986-05-01), Haken et al.
patent: 4740484 (1988-04-01), Norstrom et al.
patent: 4877755 (1989-10-01), Rodder
patent: 5027185 (1991-06-01), Liauh
patent: 5034348 (1991-07-01), Hartswick et al.
patent: 5268330 (1993-12-01), Givens et al.
patent: 5322809 (1994-06-01), Moslehi

Affiliated with

Also associated with

Rating

Process for forming self-aligned silicide does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for forming self-aligned silicide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for forming self-aligned silicide will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1371071