Process for forming photoresists with strong resistance to react

Details Process for forming photoresists with strong resistance to react Process for forming photoresists with strong resistance to react

1981-12-14

1983-06-21

Louie, Jr., Won H.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430326, 430327, 430328, 430330, 430323, G03C 524

Patent

active

043894828

ABSTRACT:
A photoresist that has strong resistance to reactive ion etching, high photosensitivity to mid- and deep UV-light, and high resolution capability is formed by using as the resist material a copolymer of methacrylonitrile and methacrylic acid, and by baking the resist before the exposure to light for improved photosensitivity, and after exposure to light, development, and prior to treatment with reactive ion etching.

REFERENCES:
patent: 2887376 (1959-05-01), Tupis
patent: 3914462 (1975-10-01), Morishita et al.
patent: 3984582 (1976-10-01), Feder et al.
patent: 4080246 (1978-03-01), Battisti et al.
patent: 4132586 (1979-01-01), Schaible et al.
patent: 4184909 (1980-01-01), Chang et al.
Bayer et al.: Vacuum Baking of Photoresist-Coated Wafers for High Current Ion Implant Processing, IBM Technical Disclosure Bulletin, vol. 22, No. 5, Oct. 1979.

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