Process for forming pattern with negative resist using quinone d

Details Process for forming pattern with negative resist using quinone d Process for forming pattern with negative resist using quinone d

1984-03-27

1986-09-02

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430189, 430190, 430311, 430320, 430328, 430331, G03F 726

Patent

active

046096159

ABSTRACT:
A process for forming patterns with a negative type resist which comprises the steps of forming a negative type resist film made of quinone diazide oligomer having a polymerization degree of 10 or less, such as a quinone diazide sulfonic ester on a substrate, irradiating the resist film selectively with far ultraviolet rays having a wavelength of 180-300 nm to expose the above film, and then developing the film thus exposed by the use of a suitable developer such as a solution containing any one of an acetic ester, an alkyl ketone and cyclohexanone, and another process wherein the above described exposing step is carried out in such a manner that the quinone diazide sulfonic ester film is subjected to blanket exposure by means of ultraviolet rays having a longer wavelength than 300 nm, and then the resist film, thus exposed, is further subjected to selective exposure by means of far ultraviolet rays of 300 nm or less.

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Pacansky, J., et al, IBM J. Res. Develop., vol. 23, No. 1, 1/1979, pp. 42-51.
DeForest, W. S., Photoresist Matl's and Processes, McGraw-Hill Book Co., 1975, p. 105.

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