Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-12-02
2000-10-31
Bowers, Charles
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438216, 438591, 438763, 438954, H01L 21336
Patent
active
061401870
ABSTRACT:
The present invention provides a process for forming a dopant barrier layer in a gate stack in a semiconductor device. In one advantageous embodiment, the process includes forming a gate oxide on a semiconductor substrate, forming a gate layer on the gate oxide, and forming an ultra thin (less than about 2.5 nm) silicon nitride dopant barrier layer between the gate oxide and the gate layer. The dopant barrier layer provides an excellent barrier to inhibit dopant diffusion through the gate oxide and into the p-channel during the formation of the source/drain areas. Moreover, the formation of this dopant barrier layer and the formation of the gate layer can easily be achieved in a single furnace, if so desired.
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DeBusk Damon K.
Higashi Gregg S.
Roy Pradip K.
Zhao Nancy Xianghong
Bowers Charles
Brewster William M.
Lucent Technologies - Inc.
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