Process for forming mask patterns of positive type resist materi

Details Process for forming mask patterns of positive type resist materi Process for forming mask patterns of positive type resist materi

1987-05-18

1988-12-13

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430312, 430313, 430323, 430326, G03F 726

Patent

active

047910461

ABSTRACT:
A process for forming high resolution resist patterns using a positive type resist material comprising a photoactive resin having phenolic hydroxyl groups, an organic solvent, and 5 to 50% by weight of trimethylsilylnitride.
The process for forming high resolution mask patterns comprises the steps of forming a first resist layer on a wafer for planarizing the wafer surface, forming a second resist layer on said first resist layer by using the positive type resist material mentioned above wherein the first resist layer has a higher plasma etch rate than the second resist layer, exposing and removing the second resist layer so as to form a mask pattern, and subjecting the mask pattern and the first resist layer to a reactive ion etching so as to removce the first resist layer by using the mask pattern as an etching mask.

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patent: 4624909 (1986-11-01), Saootome et al.
patent: 4689288 (1987-08-01), Buiguez et al.
Reichmanis, E. et al., Solid State Technology, 8/1985, pp. 130-135.
Tai, K. L. et al., J. Vac. Sci. Technol. 16 (6), 11/12/1979, pp. 1977-1979.

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