Process for forming improved titanium-containing barrier layers

Details Process for forming improved titanium-containing barrier layers Process for forming improved titanium-containing barrier layers

1997-11-12

1999-12-28

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419215, 438643, 438648, 438653, 438656, 438685, 438688, C23C 1434, H01L 21441

Patent

active

060076844

ABSTRACT:
An improved titanium nitride barrier layer that prevents spiking between an overlying aluminum layer and a silicon substrate is formed by first sputter depositing a titanium layer onto the substrate, forming an oxygen-containing titanium layer thereover, and sputter depositing a titanium nitride layer over the oxygen-containing layer. The oxygen-containing layer can be formed in an oxygen-containing plasma, or titanium can be sputtered in the presence of oxygen. The titanium-containing layers can be deposited in a single sputtering chamber fitted with a source of RF power to the substrate support to form the plasma. An aluminum contact layer is sputter deposited over the titanium nitride layer.

REFERENCES:
patent: 5232871 (1993-08-01), Ho
patent: 5290731 (1994-03-01), Sugano et al.
patent: 5341026 (1994-08-01), Harada et al.
patent: 5371042 (1994-12-01), Ong
patent: 5378660 (1995-01-01), Ngan et al.
Hoshino Translation of Japan 5-36627, Feb. 1993.
Brett et al, High rate planar magnetron deposition of transparent, conducting and heat reflecting films on glass and plastic:, J. Vac. Sci. Technol. A1(2) Apr.-Jun. 1983, pp.352-355.
Dixit et al, "Reactively sputtered titanium nitride film for submicron contact barrier metallization", Appl. Phys. Lett. 62(4) Jan. 25, 1993, pp. 357-359.
Liao et al, Ti/TiN Barrier Enhancement for Aluminum Plug Interconnect Technology:, VMIC Conf, 1994, ISMIC-103/94/0428 pp. 428-434.

Affiliated with

Also associated with

Rating

Process for forming improved titanium-containing barrier layers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for forming improved titanium-containing barrier layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for forming improved titanium-containing barrier layers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2379976