Process for forming improved titanium-containing barrier layers

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

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20419225, 20419215, 438643, 438653, 438656, 438685, C23C 1434, H01L 21441

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active

058581847

ABSTRACT:
An improved titanium nitride barrier layer that prevents spiking between an overlying aluminum layer and a silicon substrate is formed by first sputter depositing a titanium layer onto the substrate, forming an oxygen-containing titanium layer thereover, and sputter depositing a titanium nitride layer over the oxygen-containing layer. The oxygen-containing layer can be formed in an oxygen-containing plasma, or titanium can be sputtered in the presence of oxygen. The titanium-containing layers can be deposited in a single sputtering chamber fitted with a source of RF power to the substrate support to form the plasma. An aluminum contact layer is sputter deposited over the titanium nitride layer.

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Dixit et al, "Reactively supttered titanium nitride films for submicron contact barrier metallization", Appl. Phys. Lett. 62(4) 25 Jan. 1993, pp. 357-359.

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