Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1995-06-07
1999-01-12
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419225, 20419215, 438643, 438653, 438656, 438685, C23C 1434, H01L 21441
Patent
active
058581847
ABSTRACT:
An improved titanium nitride barrier layer that prevents spiking between an overlying aluminum layer and a silicon substrate is formed by first sputter depositing a titanium layer onto the substrate, forming an oxygen-containing titanium layer thereover, and sputter depositing a titanium nitride layer over the oxygen-containing layer. The oxygen-containing layer can be formed in an oxygen-containing plasma, or titanium can be sputtered in the presence of oxygen. The titanium-containing layers can be deposited in a single sputtering chamber fitted with a source of RF power to the substrate support to form the plasma. An aluminum contact layer is sputter deposited over the titanium nitride layer.
REFERENCES:
patent: 5232871 (1993-08-01), Ho
patent: 5290731 (1994-03-01), Sugano et al.
patent: 5341026 (1994-08-01), Harada et al.
patent: 5371042 (1994-12-01), Ong
patent: 5378660 (1995-01-01), Ngan et al.
Lio et al, "Ti/TiN Barrier Enhancement for Aluminum Plug Interconnect Technology", VMIC Conference, 1994, ISMIC--103/94/0428 pp. 428-434.
Brett et al, "High rate planar magnetron deposition of transpaprent, conducting and heat reflecting films on glass and plastic", J. Vac. Sci. Technol. A1(2) Apr.-Jun. 1983, pp. 352-355.
Dixit et al, "Reactively supttered titanium nitride films for submicron contact barrier metallization", Appl. Phys. Lett. 62(4) 25 Jan. 1993, pp. 357-359.
Chen Fusen
Fu Jianming
Applied Materials Inc.
McDonald Rodney G.
Morris Birgit E.
Nguyen Nam
Verplancken Donald
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