Process for forming double-layer crown capacitor

Details Process for forming double-layer crown capacitor Process for forming double-layer crown capacitor

1997-12-29

1999-11-09

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438634, H01L 218242

Patent

active

059813369

ABSTRACT:
A process for forming a double-layer crown capacitor is provided for increasing the surface area of the capacitor and is applied to a memory unit. The process includes: a) forming a contact window, b) forming a first conducting layer, c) forming a second insulator over the first conducting layer, d) forming a second conducting layer, e) forming a third insulator, f) removing portions of the third insulator and the second conducting layer for exposing a part of the second conducting layer to form a masking layer, g) removing another portion of the third insulator and portions of the second insulator and the first conducting layer, h) removing another portion of the second conducting layer and a portion of the second insulator not covered by the masking layer, i) forming spacers alongside the masking layer and another portion of the second insulator, and removing the masking layer and the another portion of the second insulator for defining a first capacitor by the spacers and another portion of the first conducting layer, j) forming a dielectrical layer, and k) forming a third conducting layer to serve as a second capacitor.

REFERENCES:
patent: 5807775 (1998-09-01), Tseng
patent: 5811331 (1998-09-01), Ying et al.
patent: 5824591 (1998-10-01), Sakoh
Watanabe et al., "A New Cylindrical Capacitor . . . ", IEEE (1992) 10.1.1-10.1.4.

Affiliated with

Also associated with

Rating

Process for forming double-layer crown capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for forming double-layer crown capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for forming double-layer crown capacitor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1455077