Process for forming coatings on semiconductor devices

Details Process for forming coatings on semiconductor devices Process for forming coatings on semiconductor devices

1998-01-26

1999-10-19

Picardat, Kevin M.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438758, 438765, H01L 2131, H01L 21469

Patent

active

059703822

ABSTRACT:
A process for forming coatings and films from a gaseous reactant onto a semiconductor device is disclosed. The process includes preheating a gas to a temperature so that the gas will immediately react with the semiconductor wafer. After being preheated, the gas is contacted with the wafer under controlled conditions in order to form a uniform film. For instance, in one embodiment, a gas containing dinitrogen oxide is preheated until the dinitrogen oxide disassociates into nitric oxide. The nitric oxide is then contacted with the wafer to form an oxide coating. In an alternative embodiment, gaseous hydrogen and oxygen are preheated to a temperature sufficient to form steam, which subsequently chemically reacts with the wafer.

REFERENCES:
patent: 4938857 (1990-07-01), Gillery
patent: 5256455 (1993-10-01), Numasawa
patent: 5376593 (1994-12-01), Sandhu et al.
patent: 5445999 (1995-08-01), Thakur et al.

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