Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-06-07
2005-06-07
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S763000, C438S769000, C438S770000, C438S775000, C438S786000, C438S791000
Reexamination Certificate
active
06903007
ABSTRACT:
An anti-reflective coating is formed between a material layer which is to be patterned on a semiconductor structure using photolithography, and an overlying photoresist layer. The anti-reflective coating suppresses reflections from the material layer surface into the photoresist layer that could degrade the patterning. The anti-reflective coating includes an anti-reflective layer of silicon oxime, silicon oxynitride, or silicon nitride, and a barrier layer which is grown on the anti-reflective layer using a nitrous oxide plasma discharge to convert a surface portion of the anti-reflective layer into silicon dioxide. The barrier layer prevents interaction between the anti-reflective layer and the photoresist layer that could create footing. The anti-reflective layer is deposited on the material layer using Plasma Enhanced Chemical Vapor Deposition (PECVD) in a reactor. The barrier layer is grown on the anti-reflective layer in-situ in the same reactor, thereby maximizing throughput.
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Foote David K.
Ngo Minh Van
Nguyen Thanh
Nguyen Tuan H.
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