Process for forming an electronic device including...

Details Process for forming an electronic device including... Process for forming an electronic device including...

2007-06-05

2007-06-05

Tran, Long (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S212000, C438S243000, C257S330000, C257S332000, C977S707000, C977S712000

Reexamination Certificate

active

11188909

ABSTRACT:
A process for forming an electronic device can include forming a first set of discontinuous storage elements over a primary surface of a substrate and forming a trench within the substrate. The process can also include forming a second set of discontinuous storage elements within the trench. The process can further include forming a first gate electrode within the trench, wherein a discontinuous storage element lies between the first gate electrode and a wall of the trench. The process can still further include removing a part of the second set of discontinuous storage elements and forming a second gate electrode over the first gate electrode. After forming the second gate electrode, substantially none of the second set of discontinuous storage elements lies along the wall of the trench at an elevation between an upper surface of the first gate electrode and the primary surface of the substrate.

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