Process for forming an electronic device including...

Details Process for forming an electronic device including... Process for forming an electronic device including...

2007-05-01

2007-05-01

Tran, Long K. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S212000, C438S243000, C257S330000, C257S332000, C977S707000

Reexamination Certificate

active

11188939

ABSTRACT:
A process for forming an electronic device can include forming a first trench within a substrate, wherein the trench includes a wall and a bottom and extends from a primary surface of the substrate. The process can also include forming discontinuous storage elements and forming a first gate electrode within the trench such that, a first discontinuous storage element of the discontinuous storage elements lies between the first gate electrode and the wall of the trench. The process can further include removing the discontinuous storage elements that overlie the primary surface of the substrate. The process can still further include forming a second gate electrode that overlies the first gate electrode and the primary surface of the substrate.

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