Process for forming a trench power MOS device suitable for...

Details Process for forming a trench power MOS device suitable for... Process for forming a trench power MOS device suitable for...

2005-12-13

2005-12-13

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S327000, C257S330000, C438S514000, C438S519000, C438S527000, C438S542000

Reexamination Certificate

active

06974750

ABSTRACT:
A process for fabricating power semiconductor devices involving preparation of a silicon wafer by epitaxial formation of an intrinsic silicon layer on a silicon substrate and high energy implantation to form channel and drift regions in the intrinsic epitaxial silicon.

REFERENCES:
patent: 6312993 (2001-11-01), Hshieh et al.

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