Process for forming a structure

Details Process for forming a structure Process for forming a structure

2000-05-18

2002-05-07

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S761000, C438S762000

Reexamination Certificate

active

06383873

ABSTRACT:

RELATED APPLICATIONS
The present invention relates to another co-pending application entitled “Selective Removal of a Metal Oxide Dielectric” which was filed on May 18, 2000 and has a serial number of 09/574,732 and is assigned to the same assignee as the present application.
RELATED ART
In the field of semiconductor fabrication, the use of high-k dielectric materials is becoming increasingly common as the desire to increase the device speeds places practical limitations on the thickness of conventional (low-k) dielectric materials such as silicon oxide. Typical high-k dielectric materials for use include metal oxide or metal silicate materials, such as zirconium oxide (ZrO
2
), zirconium silicate (Zr
x
Si
y
O
z
,), hafnium oxide (HfO
2
), and hafnium silicate (Hf
x
Si
y
O
z
). Unfortunately, it is difficult to incorporate metal oxide dielectrics into processes that use polysilicon gate electrodes. During the conventional deposition of polysilicon on a metal oxide dielectric film, chemical reactions between the source gas used for polysilicon deposition and the metal oxide dielectric can reduce portions of the dielectric thereby adversely affecting the electrical characteristics of the film and degrading device performance or reliability. It would, therefore, be desirable to implement a fabrication process utilizing a metal oxide gate dielectric that is compatible with the subsequent use of conventional polysilicon gates.


REFERENCES:
patent: 6020243 (2000-02-01), Wallace et al.
Wilk et al., “Hafnium and zirconium silicates for advanced gate dielectrics,” American Institute of Physics, pp. 484-492 (2000).
Copel et al., “Structure and stability of ultrathin zirconium oxide layers on Si(001),” American Institute of Physics, pp. 436-438 (2000).
Wilk et al., “Stable zirconium silicate gate dielectrics deposited directly on silicon,” American Institute of Physics, pp. 112-114 (2000).
Campbell et al., “Titanium dioxide (TiO2)-based gate insulators,” IBM J. Res. Develop. vol. 33, pp. 383-392 (1999).
Jeon et al., “Effect of Barrier Layer on the Electrical and Reliability Characteristics of High-k Gate Dielectric films,” IEEE, pp. 797-800 (1998).
Shappir et al., Investigation of MOS Capacitors with Thin ZrO2Layers and Various Gate Materials for Advanced DRAM Applications, IEEE, pp. 442-449 (1986).

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