Process for forming a semiconductor device including a capacitor

Details Process for forming a semiconductor device including a capacitor Process for forming a semiconductor device including a capacitor

1997-05-05

1998-02-03

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438251, 438393, H01L 2170, H01L 2700

Patent

active

057144117

ABSTRACT:
A capacitor for a semiconductor device is formed by selectively processing a portion of a layer (41, 113) to form an electrode (411, 81, 101, 111) for the capacitor. The selective processing includes selective doping, selective silicidation, selective oxidation, or the like. Contacts can be made to the electrode (411) with a reduced likelihood of the contact electrically shorting the electrodes of the capacitor together. When forming contact openings, misalignment tolerance is increased.

REFERENCES:
patent: 4163243 (1979-07-01), Kamins et al.
patent: 4335505 (1982-06-01), Shibata et al.
patent: 4441249 (1984-04-01), Alspector et al.
patent: 4980732 (1990-12-01), Okazawa
patent: 5037772 (1991-08-01), McDonald
patent: 5166085 (1992-11-01), Wakai et al.
patent: 5196233 (1993-03-01), Chan et al.

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