Process for forming a semiconductor device and a static-random-a

Details Process for forming a semiconductor device and a static-random-a Process for forming a semiconductor device and a static-random-a

1997-02-10

1998-02-24

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438241, 438279, H01L 218244

Patent

active

057211671

ABSTRACT:
A semiconductor device (10) is formed having an SRAM array with a plurality of SRAM cells. In forming the access and latch transistors, two different gate electrode compositions are used to form the access and latch transistors. More specifically, a dielectric layer (22) is formed between two conductive layers (26 and 28) within the gate electrode (52) for the access transistors while the dielectric layer is not formed between the two conductive layers (26 and 28) for the latch transistors. This structure allows an increase in the beta ratio for the SRAM cell thereby making a more stable SRAM cell without having to use diffused resistors between the access transistors in storage nodes or by having to form a differential thickness between the gate dielectric layers for the latch transistors and the access transistors.

REFERENCES:
patent: 4590508 (1986-05-01), Hirakawa et al.
patent: 4848801 (1989-07-01), Honjyo et al.
patent: 5179033 (1993-01-01), Adan
patent: 5371026 (1994-12-01), Hayden et al.
James R. Pfiester, "Semiconductor Device having Electrically coupled Transistors With a Differential Current Gain, " U.S. patent application serial number 08/459,198, Filed Jun. 2, 1995.

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