Process for forming a patterned resist mask

Details Process for forming a patterned resist mask Process for forming a patterned resist mask

1980-10-14

1982-05-18

Brammer, Jack P.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430296, 430311, 430313, 430331, G03C 500

Patent

active

043306144

ABSTRACT:
The performance of ethylene glycol alkylether developers, for positive methacrylate-methacrylic acid copolymer and terpolymer resists, is controlled by adding an organic complexing agent, such as citric acid, or a combination of a transition metal salt and a complexing agent, such as ammonium citrate, to the developer. The additives provide a consistent development rate, so that the maximum difference between the dissolution rates of the exposed and unexposed portions of the resist layer can be maintained, regardless of the developer purity.

REFERENCES:
patent: 3475171 (1969-10-01), Alles
patent: 3987215 (1976-10-01), Cortellino
patent: 4130425 (1978-12-01), Boyd

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