Process for forming a buried plate

Details Process for forming a buried plate Process for forming a buried plate

2007-03-08

2009-02-10

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S245000, C438S248000, C438S386000, C438S388000, C257SE21651

Reexamination Certificate

active

07488642

ABSTRACT:
A method is provided for making a buried plate region in a semiconductor substrate. According to such method, a trench is a single-crystal semiconductor region of a substrate is etched to form a trench elongated in a direction extending downwardly from a major surface of the substrate. A dopant source layer is formed to overlie a lower portion of the trench sidewall but not an upper portion of the trench sidewall. A layer consisting essentially of semiconductor material is epitaxially grown onto a single-crystal semiconductor region exposed at the upper portion of the trench sidewall above the dopant source layer. Through annealing, a dopant is then driven from the dopant source layer into the single-crystal semiconductor material of the substrate adjacent to the lower portion to form a buried plate. Then, the dopant source layer is removed and an isolation collar is formed along at least a part of the upper portion.

REFERENCES:
patent: 5905279 (1999-05-01), Nitayama et al.
patent: 6756626 (2004-06-01), Lutzen
patent: 7041553 (2006-05-01), Kangguo et al.
patent: 2002/0196651 (2002-12-01), Weis
patent: 2004/0157389 (2004-08-01), Gustin et al.

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