Process for forming a buried plate

Details Process for forming a buried plate Process for forming a buried plate

2007-05-29

2007-05-29

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S246000, C438S249000, C257SE27092

Reexamination Certificate

active

10710045

ABSTRACT:
A method is provided for making a buried plate region in a semiconductor substrate. According to such method, a trench is formed in a semiconductor substrate, the trench having a trench sidewall, the sidewall including an upper portion, and a lower portion disposed below the upper portion. A dopant source layer is formed along the lower portion of the trench sidewall, the dopant source layer not being disposed along the upper portion of the trench sidewall. A layer is formed to cover the upper portion of the trench sidewall. Annealing is then performed to drive a dopant from the dopant source layer into the semiconductor substrate adjacent to the lower portion of the trench sidewall.

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