Process for formation of resist patterns

Details Process for formation of resist patterns Process for formation of resist patterns

1993-08-02

1995-04-04

Duda, Kathleen

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

430270, 430311, 430331, 430942, G03F 732, G03F 7039

Patent

active

054036992

ABSTRACT:
A pattern formation process using a positive-working resist material of the formula (I): ##STR1## in which R.sup.1 and R.sup.2 may be the same or different, and each represents a substituted or unsubstituted lower alkyl group, X represents a halogen atom, and m and n each is larger than 0 and smaller than 100; and carrying out the development of the selectively exposed resist material with xylene for 10 to 20 minutes, or with other solvent(s). This process effectively obtains fine resist patterns having an increased sensitivity and excellent resolution without a reduction of the layer thickness in an unexposed area of the resist and resist residues in an exposed area of the same.

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