Process for formation of resist patterns

Details Process for formation of resist patterns Process for formation of resist patterns

1991-08-08

1993-03-16

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430286, 430287, 430197, G03C 500, G03C 516

Patent

active

051943646

ABSTRACT:
Process for the formation of resist patterns in a single layer resist process and a two layer resist process comprising using a resist material prepared from a silicon-containing polymer and an addition agent which can bond to said polymer upon an addition reaction when said resist material is exposed to a patterning radiation, and developing an exposed layer of said resist material with the down flow etching. The resulting resist patterns can be advantageously used in the production of LSIs, VLSIs and other devices.

REFERENCES:
patent: 4368092 (1983-01-01), Steinberg et al.
patent: 4500628 (1983-02-01), Taylor
Patent Abstracts of Japan vol. 12, No. 139 (C-491) (2986) Apr. 27, 1988, & JP-A-62 256804 (NEC Corp.) Nov. 9, 1987.
Patent Abstracts of Japan vol. 12, No. 220 (P-720) (3067) Jun. 23, 1988, & JP-A-63 015240 (Fujitsu Ltd.) Jan. 22, 1988.
Patent Abstracts of Japan vol. 10, No. 50 (E-384) (2107) Feb. 27, 1986, & JP-A-60 206135 (Toshiba K.K.) Oct. 17, 1985.

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