Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-11-01
2005-11-01
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S635000
Reexamination Certificate
active
06960541
ABSTRACT:
A semiconductor element with at least one layer of tungsten oxide, optionally in a structured tungsten oxide layer, is described. The semiconductor element is characterized in that the relative premittivity of the tungsten oxide layer is higher than 50.
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Drescher Dirk
Schrems Martin
Tews Helmut
Wurzer Helmut
Greenberg Laurence A.
Infineon - Technologies AG
Le Thao X.
Locher Ralph E.
Pham Long
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