Process for fabrication of a ferroelectric capacitor

Details Process for fabrication of a ferroelectric capacitor Process for fabrication of a ferroelectric capacitor

2007-04-03

2007-04-03

Nadav, Ori (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S003000, C257S310000

Reexamination Certificate

active

10651614

ABSTRACT:
A process for the fabrication of a ferroelectric capacitor comprising depositing a layer of Ti5over an insulating layer3of Al2O3, and oxidising the Ti layer to form a TiO2layer7.Subsequently, a layer of PZT9is formed over the TiO2layer7.The PZT layer9is subjected to an annealing step in which, due to the presence of the TiO2layer7it crystallises to form a layer11with a high degree of (111)-texture.

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patent: 101 52 636 (2003-01-01), None

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