Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-03-15
2005-03-15
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S393000, C438S649000, C257S295000
Reexamination Certificate
active
06867093
ABSTRACT:
A method for use in the fabrication of integrated circuits includes providing a substrate assembly having a surface. An adhesion layer is formed over at least a portion of the surface. The adhesion layer is formed of RuSixOy, where x and y are in the range of about 0.01 to about 10. The adhesion layer may be formed by depositing RuSixOyby chemical vapor deposition, atomic layer deposition, or physical vapor deposition or the adhesion layer may be formed by forming a layer of ruthenium or ruthenium oxide over a silicon-containing region and performing an anneal to form RuSixOyfrom the layer of ruthenium and silicon from the adjacent silicon-containing region. Capacitor electrodes, interconnects or other structures may be formed with such an adhesion layer. Semiconductor structures and devices can be formed to include adhesion layers formed of RuSixOy.
REFERENCES:
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4157943 (1979-06-01), Scarpellino, Jr. et al.
patent: 4250210 (1981-02-01), Crosby et al.
patent: 4413022 (1983-11-01), Suntola et al.
patent: 4982309 (1991-01-01), Shepherd
patent: 5080862 (1992-01-01), Luthra
patent: 5122923 (1992-06-01), Matsubara et al.
patent: 5126016 (1992-06-01), Glenning et al.
patent: 5130172 (1992-07-01), Hicks et al.
patent: 5241137 (1993-08-01), Kiribayashi
patent: 5270241 (1993-12-01), Dennison et al.
patent: 5286675 (1994-02-01), Chen et al.
patent: 5314727 (1994-05-01), McCormick et al.
patent: 5335138 (1994-08-01), Sandhu et al.
patent: 5352488 (1994-10-01), Spencer et al.
patent: 5372849 (1994-12-01), McCormick et al.
patent: 5525181 (1996-06-01), Bruckner et al.
patent: 5529953 (1996-06-01), Shoda
patent: 5612574 (1997-03-01), Summerfelt et al.
patent: 5614795 (1997-03-01), Kim
patent: 5618761 (1997-04-01), Eguchi et al.
patent: 5637533 (1997-06-01), Choi
patent: 5662815 (1997-09-01), Kim
patent: 5705442 (1998-01-01), Yen et al.
patent: 5719425 (1998-02-01), Akram et al.
patent: 5729054 (1998-03-01), Summerfelt et al.
patent: 5742322 (1998-04-01), Cranton et al.
patent: 5843830 (1998-12-01), Graettinger et al.
patent: 5866460 (1999-02-01), Akram et al.
patent: 5874174 (1999-02-01), Okuda et al.
patent: 5885750 (1999-03-01), Hsiao et al.
patent: 5962716 (1999-10-01), Uhlenbrock et al.
patent: 5994034 (1999-11-01), Maehata
patent: 6063705 (2000-05-01), Vaartstra
patent: 6133159 (2000-10-01), Vaartstra et al.
patent: 6194753 (2001-02-01), Seon et al.
patent: 6197628 (2001-03-01), Vaartstra et al.
patent: 6320213 (2001-11-01), Kirlin et al.
patent: 6407422 (2002-06-01), Asano et al.
patent: 6429127 (2002-08-01), Derderian et al.
patent: 6461909 (2002-10-01), Marsh et al.
patent: 9031042 (1990-02-01), None
Cowles et al.,Chemical Communications, p. 392, 1969.
Green et al., “Chemical Vapor Deposition of Ruthenium and Ruthenium Dioxide Films”,J. Electrochem. Soc., vol. 132, No. 11, pp. 2677-2685, Nov. 1985.
Simpson et al., “Atomic Layer Epitaxy,”Chem Br., vol. 23, No. 1, pp. 37-38, 40, Jan. 1987.
Hirva et al., “Theoretical Studies on the Growth Mechanisms of Silicon Thin Films by Atomic Layer Epitaxy,”Surface Science, 220, pp. 137-151, 1989.
Gregory et al., “Conditions for the Deposition of CdTe by Electrochemical Atomic Layer Epitaxy,”J. Electrochem. Soc., vol. 138, No. 5, pp. 1279-1284, May 1991.
Koleske et al., “Growth of Si on (100) via H/Cl Exchange and the Effect of Interfacial Boron,”J. Appl. Phys., vol. 72, No. 9, pp. 4073-4082, Nov. 1, 1992.
Norton et al., “Organometallic Chemical Vapour Deposition of Platinum and Gold: Heterogeneous Deposition and Surface Chemistry,”Surface Science, 307-309, pp. 172-176, 1994.
Borup et al., “Electrochemical and Vacuum Behavior of Carbon Monoxide and Lead Coadsorbed on Platinum (111),”J. Electroanalytical Chem., vol. 374, pp. 235-244, 1994.
Aquino et al., “Evidence for a Surface Methylene Species in the Decomposition of Trimethylgallium on GaAs(100)-(4×1): A High Resolution Electron Energy Loss Spectroscopy Study,” Surface Science, vol. 327, pp. 74-80, 1995.
Ylilammi, “Monolayer Thickness in Atomic Layer Deposition,”Thin Solid Films, vol. 279, pp. 124-130, 1996.
George et al., “Surface Chemistry for Atomic Layer Growth,”J. Phys. Chem., vol. 100, pp. 13121-13131, 1996.
Liao et al., “Characterization of RuO2 Thin Films Deposited on Si by Metal-Organic Chemical Vapor Deposition,”Thin Solid Films, vol. 287, pp. 74-79, 1996.
Silmon et al., “Thickness Profiles of Thin Films Caused by Secondary Reactions in Flow-Type Atomic Layer Deposition Reactors,”J. Phys. D: Appl. Phys., vol. 30, pp. 1725-1728, 1997.
Min et al., “Atomic Layer Deposition of TiN Films by Alternate Supply of Tetrakis (ethylmethylamino)—Titanium and Ammonia,”Jpn. J. Appl. Phys., vol. 37, pp. 4999-5004, 1998.
Kraus Brenda D
Marsh Eugene P.
Le Dung A.
Micro)n Technology, Inc.
TraskBritt
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