Process for fabricating nonvolatile semiconductor memory device

Details Process for fabricating nonvolatile semiconductor memory device Process for fabricating nonvolatile semiconductor memory device

1997-01-30

1998-12-29

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438 3, 438253, 438396, H01L 2100, H01L 218242, H01L 2120

Patent

active

058541047

ABSTRACT:
A process for fabricating a nonvolatile semiconductor memory device has one transistor and one ferroelectric capacitor electrically connected to each other by a contact plug, which comprising forming a transistor; forming an inter-layer insulating film, at least an upper surface portion thereof being a titanium oxide film; forming a capacitor lower electrode; and forming a capacitor insulating film and a capacitor upper electrode, wherein the lower electrode forming step comprises: depositing a titanium nitride film and a platinum film on the titanium oxide film; etching the platinum film with a first etching gas adapted to suppress deposition of substances including platinum; and etching the titanium nitride film with a second etching gas having a high etching selectivity to the titanium oxide film.

REFERENCES:
patent: 5046043 (1991-09-01), Miller et al.
patent: 5350705 (1994-09-01), Brassington et al.
patent: 5407855 (1995-04-01), Maniar et al.
patent: 5418388 (1995-05-01), Okudaira et al.
Onishi et al., IEDM(1994), "A Half-Micron Ferroelectric Memory Cell Technology with Stacked Capacitor Structure", pp. 843-846.

Affiliated with

Also associated with

Rating

Process for fabricating nonvolatile semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for fabricating nonvolatile semiconductor memory device , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for fabricating nonvolatile semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1424021