Process for fabricating layered superlattice materials and makin

Details Process for fabricating layered superlattice materials and makin Process for fabricating layered superlattice materials and makin

1994-12-05

1998-10-20

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 15, H01L 2976

Patent

active

058250573

ABSTRACT:
A liquid precursor containing a metal is applied to a substrate, RTP baked, and annealed to form a layered superlattice material. Prebaking the substrate and oxygen in the RTP and anneal is essential, except for high bismuth content precursors. Excess bismuth between 110% and 140% of stoichiometry and RTP temperature of 725.degree. C. is optimum. The film is formed in two layers, the first of which uses a stoichiometric precursor and the second of which uses an excess bismuth precursor. The electronic properties are so regularly dependent on process parameters and material composition, and such a wide variety of materials are possible, that electronic devices can be designed by selecting from a continuous record of the values of one or more electronic properties as a continuous function of the process parameters and material composition, and utilizing the selected process and material composition to make a device.

REFERENCES:
patent: 4793872 (1988-12-01), Meunier et al.
patent: 5146299 (1992-09-01), Lampe et al.
patent: 5206788 (1993-04-01), Larson et al.
Smolenskii et al., "Ferroelectrics of the Oxygen-Octahedral type with Layered Structure," Soviet Physics-Solid State, vol. 3, No. 3, Sep., 1961, pp. 651-655.
Subbarao, "A Family of Ferroelectric Bismuth Compounds," J. Phys. Chem. Solids, Pergamon Press, 1962, vol. 23, pp. 665-676.

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