Process for fabricating integrated devices including flash-EEPRO

Details Process for fabricating integrated devices including flash-EEPRO Process for fabricating integrated devices including flash-EEPRO

1994-02-10

1997-06-10

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438981, H01L 218247

Patent

active

056375204

ABSTRACT:
A process for simultaneously fabricating a flash-EEPROM memory and circuit transistors using a DPCC process. A first polysilicon layer is not removed from the circuit area, and the gate regions of a circuit transistors are formed by shorting first and second polysilicon layers. A thin tunnel oxide layer of the memory cells is formed using the same mask provided for implanting boron into the cell area of the substrate. Following implantation and without removing the mask, the gate oxide formed previously over the whole surface of the wafer is removed from the cell area; the boron implant mask is removed; and tunnel oxidation is performed to increase the thickness of the tunnel oxide by a desired amount, and to slightly increase the thickness of the oxide in the transistor area.

REFERENCES:
patent: 4766088 (1988-08-01), Kono et al.
patent: 5086008 (1992-02-01), Riva
patent: 5132239 (1992-07-01), Ghezzi et al.
patent: 5215934 (1993-06-01), Tzeng
patent: 5254489 (1993-10-01), Nakata
patent: 5316981 (1994-05-01), Gardner et al.
patent: 5384279 (1995-01-01), Stolmeijer et al.
patent: 5449629 (1995-09-01), Kajita
patent: 5498577 (1996-03-01), Fulford, Jr. et al.

Affiliated with

Also associated with

Rating

Process for fabricating integrated devices including flash-EEPRO does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for fabricating integrated devices including flash-EEPRO, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for fabricating integrated devices including flash-EEPRO will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-764247