Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1994-10-17
1997-04-22
Fourson, George
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438384, 438396, 438210, 438330, H01L 2170
Patent
active
056228872
ABSTRACT:
A semiconductor device comprising a MIS structure comprising a first electrically conductive film formed on an oxide film, a second electrically conductive film formed on at least a part of said first electrically conductive film, an insulator film formed on said second electrically conductive film, and a third electrically conductive film formed on said insulator film; and at least one electrode contact portion formed on said first electrically conductive film. A semiconductor device comprising a MIS capacitor having a diffusion layer inside the semiconductor substrate as a lower electrode with a first electrically conductive type being isolated using another diffusion layer having the opposite conductive type, and said another diffusion layer having the opposite conductive type being further isolated using a diffusion layer for isolation having the first conductive type and which is earthed. A BiCMOS semiconductor device comprising a resistor and an impurity source for the emitter and the emitter electrode for the bipolar transistor made of a same conductor layer, and further, a same conductor layer is provided as the contact electrode for the resistor and the gate for the MOS transistor. Also claimed are processes for fabricating the aforementioned semiconductor devices.
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Fujisawa Tomotaka
Gomi Takayuki
Miwa Hiroyuki
Shinohara Mamoru
Fourson George
Pham Long
Sony Corporation
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