Process for fabricating a strained channel MOSFET device

Details Process for fabricating a strained channel MOSFET device Process for fabricating a strained channel MOSFET device

2011-03-01

2011-03-01

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S019000, C257S065000, C257S616000, C257S336000, C257S343000, C257S344000, C257S369000, C257SE29084, C257SE29266, C257SE29193, C257SE27062

Reexamination Certificate

active

07898028

ABSTRACT:
A process for fabricating a MOSFET device featuring a channel region comprised with a silicon-germanium component is provided. The process features employ an angled ion implantation procedure to place germanium ions in a region of a semiconductor substrate underlying a conductive gate structure. The presence of raised silicon shapes used as a diffusion source for a subsequent heavily-doped source/drain region, the presence of a conductive gate structure, and the removal of dummy insulator previously located on the conductive gate structure allow the angled implantation procedure to place germanium ions in a portion of the semiconductor substrate to be used for the MOSFET channel region. An anneal procedure results in the formation of the desired silicon-germanium component in the portion of semiconductor substrate to be used for the MOSFET channel region.

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