Process for fabricating a solder bump for a flip chip integrated

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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438614, H01L 2144

Patent

active

057599106

ABSTRACT:
A process for fabricating a solder bump having an improved geometry includes the steps of evaporatively depositing a first metallization system to form a post having a predetermined volume onto an integrated circuit having a passivation layer defining a die pad window, wherein the length of the post is greater than the width of the post, and wherein the length of the post extends beyond the die pad window over the passivation layer, and evaporatively depositing a second metallization system onto the post to form a cap also having a volume, wherein the first metallization system forming the post and the second metallization system forming the cap, when reflowed, form a eutectic solder bump.

REFERENCES:
patent: 4950623 (1990-08-01), Dishon
patent: 5244833 (1993-09-01), Gansauge et al.
patent: 5441917 (1995-08-01), Rostoker et al.
patent: 5466635 (1995-11-01), Lynch et al.
patent: 5468655 (1995-11-01), Greer
patent: 5470787 (1995-11-01), Greer
patent: 5503286 (1996-04-01), Nye, III et al.
patent: 5586715 (1996-12-01), Schwiebert et al.

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