Process for fabricating a semiconductor device having deep...

Details Process for fabricating a semiconductor device having deep... Process for fabricating a semiconductor device having deep...

2004-10-18

2008-07-22

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S388000, C438S455000, C438S473000, C438S700000, C257SE21008, C257SE21396, C257SE21646, C257SE21655

Reexamination Certificate

active

07402487

ABSTRACT:
A process for fabricating a semiconductor device having deep trench structures includes forming a first portion of the trench in a semiconductor substrate and a second portion of the trench in a selectively-formed upper layer. After etching the substrate to form the first portion of the trench, a protective layer is deposited over the inner surface of the trench in the semiconductor substrate and the upper layer is selectively formed on a principal surface of the semiconductor substrate. During formation of the upper layer, a wall surface is formed in the upper layer that is continuous with the wall surface of the trench in the semiconductor substrate. By forming a second portion of the trench in the selectively-formed upper layer, a deep trench is produced having a high aspect ratio and well defined geometric characteristics.

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