Process for fabricating a multi-stage read-only memory device

Details Process for fabricating a multi-stage read-only memory device Process for fabricating a multi-stage read-only memory device

1996-03-11

1998-04-28

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438276, 438277, H01L 218246

Patent

active

057443920

ABSTRACT:
A multi-stage ROM device capable of storing multi-stage data and allowing high packing density for a ROM chip thus fabricated and a process for fabricating such a multi-stage ROM device. In the ROM device, the intersection between a first bit line and a word line is formed with a diode having a threshold voltage controlled at about 0.7 V, and the intersection between another bit line and word line is formed with a bipolar transistor with a threshold voltage controlled at about 3 V-5 V. The other intersections are each formed with a permanently-OFF transistor. By using these different types of memory cells, the ROM device is capable of storing multi-stage data.

REFERENCES:
patent: 5550075 (1996-08-01), Hsu et al.
patent: 5571739 (1996-11-01), Hong
patent: 5585297 (1996-12-01), Sheng et al.

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