Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Patent
1996-08-27
1999-03-23
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
438486, 438489, H01L 2120
Patent
active
058858849
ABSTRACT:
A film primarily comprising silicon crystal grains having a random crystal structure. The average size of the grains are within the range of approximately 50 .ANG. to 500 .ANG..
REFERENCES:
patent: 4249962 (1981-02-01), Celler
patent: 4467519 (1984-08-01), Glang et al.
patent: 4498092 (1985-02-01), Yamazaki
patent: 4656021 (1987-04-01), Tanaba et al.
patent: 4818564 (1989-04-01), Ishihara et al.
patent: 4980303 (1990-12-01), Yamauchi
patent: 5017308 (1991-05-01), Iijima et al.
patent: 5184200 (1993-02-01), Yamanobe
patent: 5274602 (1993-12-01), Glenn
patent: 5313077 (1994-05-01), Yamazaki
patent: 5473168 (1995-12-01), Kawai et al.
patent: 5557122 (1996-09-01), Shrivastava et al.
patent: 5676765 (1997-10-01), Saito et al.
A. Miyauchi et al., J. Electrochem Soc 138(11)(1991)3480 "Low temeprature (85OC) silicon SEG . . . using SiH4--HCI-- H2", Nov. 1991.
V. Augelli et al., J. Appl. Phys., 59(8)(1986)2863 "Photoconductivity in doped microcrystalline Si:H,Cl films", Apr. 1986.
R. Avni et al., J. Appl. Phys., 6295(1987) 2044 "Correlations between plamsa and deposition of microcrystalline silicon films . . . ", Sep. 1987.
E. Grossman et al, Solar Energy Materials 13 91986, 433 "Electrical conductivity in microcrystalline Si:H:Cl films", 1986.
T. Arai et al., Jpn. J. Appl. Phys. 36 (1997) 4907 "Fast deposition of . . . microcrystalline silicon films from SiH2Cl2--SiH4-- H2 by PECVD", Jul. 1997.
K. E. Violette et al., RT&IP symposium proceedings (MRS 1995), p. 335 "low temperature selective epitaxy using Si2H6, H2 and Cl2 in UHVRTCVD", Apr. 1995.
T. Tatsumi et al., J Cryst. Growth 120(1992)275 "Selective epitaxial growth by UHV-CVD using Si2H6 and CI2", 1992.
Corcoran Sean F.
Jan Chia-Hong
Intel Corporation
Nguyen Tuan H.
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