Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-04-30
1999-08-24
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438680, H01L 2144
Patent
active
059436018
ABSTRACT:
A metallization structure is fabricated by depositing an underlayer of a group IVA metal having a thickness of about 90 to about 110 angstroms, and depositing a layer of aluminum and/or an aluminum alloy. The metallization structure obtained exhibits enhanced electromigration and is highly textured and is especially suitable for forming electrical connections or wiring.
REFERENCES:
patent: 4438450 (1984-03-01), Sheng et al.
patent: 4910580 (1990-03-01), Kuecher et al.
patent: 5071714 (1991-12-01), Rodbell et al.
patent: 5242860 (1993-09-01), Nulman et al.
patent: 5345108 (1994-09-01), Kikkawa
patent: 5360996 (1994-11-01), Nulman et al.
patent: 5373192 (1994-12-01), Eguchi
patent: 5380678 (1995-01-01), Yu et al.
patent: 5420072 (1995-05-01), Fiordalice et al.
patent: 5449641 (1995-09-01), Maeda
patent: 5523259 (1996-06-01), Merchant et al.
patent: 5525199 (1996-06-01), Scobey
patent: 5532509 (1996-07-01), D'Addeo
patent: 5552339 (1996-09-01), Hsieh
patent: 5565708 (1996-10-01), Ohsaki et al.
patent: 5580823 (1996-12-01), Hegde et al.
patent: 5584973 (1996-12-01), Wada et al.
patent: 5587339 (1996-12-01), Wyborn et al.
patent: 5627102 (1997-05-01), Shinriki et al.
patent: 5635763 (1997-06-01), Inoue et al.
patent: 5641992 (1997-06-01), Lee et al.
patent: 5641994 (1997-06-01), Bollinger et al.
patent: 5675186 (1997-10-01), Shen et al.
patent: 5738961 (1998-04-01), Chen
Knorr et al, "Correlation of Texture with Electromigration Behavior in Al Metallization", Appl. Phys. Lett., 59 (25), Dec. 16, 1991, pp. 3241-3243.
Tracy et al, "Texture in Multilayer Metallization Structures", J. Appl. Phys., 76 (5), Sep. 1, 1994, pp. 2671-2680.
Rodbell et al, "Texture Effects on the Electromigration Behavior of Layered Ti/AlCu/Ti Films", Mat. Res. Soc. Symp. Proc., vol. 265, 1992, pp. 107-112 .
Aochi Hideaki
DeHaven Patrick W.
Filippi Ronald G.
Katata Tomio
Rodbell Kenneth P.
Berry Renee R.
Bowers Charles
International Business Machines - Corporation
LandOfFree
Process for fabricating a metallization structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for fabricating a metallization structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for fabricating a metallization structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-476342