Process for fabricating a device using an ellipsometric techniqu

Coating processes – Measuring – testing – or indicating – Thickness or uniformity of thickness determined

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437 8, 437225, 216 60, H01L 2166

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054946972

ABSTRACT:
An ellipsometric method for process control in the context of device fabrication is disclosed. An ellipsometric signal is used to provide information about the device during the fabrication process. The information is used to better control the process. An ellipsometric signal of a particular wavelength is selected. The signal is selected based on the composition and thickness of the films on the substrate through which the ellipsometric signal will pass before it is reflected from the substrate. Once the appropriate wavelength is determined, the ellipsometric signal is used to monitor the thickness of the films on the substrate over time, to assist in controlling the deposition and removal of films on the substrate, and to perform other process control functions in the context of device fabrication. The ellipsometric method is used to control the deposition and removal of films that underlie patterned masks with aspect ratios of 0.3 or more, that overlie topography on a substrate surface, or that both underlie a mask and overlie topography.

REFERENCES:
patent: 4637123 (1987-01-01), Cazcarra et al.
patent: 4874240 (1989-10-01), Watts et al.
patent: 5087591 (1992-02-01), Teng
patent: 5091320 (1992-02-01), Aspnes et al.
patent: 5131752 (1992-07-01), Yu et al.
patent: 5145554 (1992-09-01), Seki et al.
patent: 5208648 (1993-05-01), Batchelder
patent: 5220403 (1993-06-01), Batchelder et al.
patent: 5223914 (1993-06-01), Auda et al.
patent: 5270222 (1993-12-01), Moslehi
patent: 5277747 (1994-01-01), Aspnes
patent: 5354575 (1994-10-01), Dagenais et al.
patent: 5362356 (1994-11-01), Schoenborn
patent: 5395769 (1995-03-01), Arienzo et al.
patent: 5403433 (1995-04-01), Morrison et al.
J. Vac. Sci. Technol. A 11(4), "In situ spectral ellipsometry for real-time thickness measurement: Etching multilayer stacks," by Steven A. Henck et al., (Jul./Aug. 1993) p. 1179.
J. Vac. Sci. Technol. B 10(6), "In situ ellipsometry and reflectometry during etching of patterned surfaces: Experiments and simulations," by M. Haverlag et al., (Nov./Dec. 1992) p. 2412.
Optical Materials 1, "Optical functions of silicon determined by two-channel polarization modulation ellipsometry," by G. E. Jellison, Jr., (1992) pp. 41-47.
J. Electrochem. Soc., Solid State Science and Technology, "Optical Etch-Rate Monitoring Using Active Device Areas: Lateral Interference Effects," by P. A. Heiman, vol. 132, No. 8, (Aug. 1985) p. 2003.
J. Electrochem. Soc.; Solid State Science and Technology, "Optical Etch-Rate Monitoring: Computer Simulation of Reflectance," by P. A. Heimann et al. (Apr. 1984) p. 881.

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