Process for fabricating a device

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging

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430313, 430314, 430315, 430323, 430325, 430942, 430966, 430967, 1566281, 1566431, G03F 726

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active

055081444

ABSTRACT:
The invention is directed to a process for fabricating an integrated circuit. An imaging layer is deposited on a substrate. The imaging layer is an energy sensitive resist material. The energy sensitive resist material contains moieties that preferentially bind to refractory material. A latent image of a pattern is introduced into the imaging layer by patternwise exposing the imaging layer to energy. The patternwise exposure introduces a selectivity into the resist material that is exploited to bind refractory material preferentially to either the exposed resist material or the unexposed resist material, but not both. The refractory material forms an etch mask over the resist material to which it preferentially binds. This etch mask is then used to transfer a pattern that corresponds to the latent image into the substrate.

REFERENCES:
patent: 4532186 (1985-07-01), Shibagaki
patent: 4702792 (1987-10-01), Chow
patent: 4981770 (1991-01-01), Taylor
patent: 5215867 (1993-06-01), Stillwagon
G. N. Taylor, et al., "At-the-Surface Schemes for Microstructure Fabrication in Polymer Films," presented at the 51st Industrial Affiliates Symposium on Chemistry, Photonics and Electronics, Stanford University, Stanford, CA., Dec. 7, 1992.

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