Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-03-07
2006-03-07
Kennedy, Jennifer (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S396000
Reexamination Certificate
active
07008842
ABSTRACT:
Process for fabricating a component, such as a capacitor in an integrated circuit, and integrated component, in which process and component a first electrode is in the form of a cup; a layer made of a dielectric covers at least the wall of the first electrode; a second electrode fills the cup; a first electrical connection via lies above the second electrode; and a second electrical connection via lies laterally with respect to and at a predetermined distance from the first electrode and is connected to the first electrode.
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patent: 0997933 (2000-05-01), None
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Tomonori, Sekiguchi, Japanese Patent Application 0824272, Publication No., 10079478, Machine Translation of Detailed Decription and Figures 9-12. Published Mar., 14, 1998.
Preliminary Search Report dated Jan. 21, 2002 for French Patent Application No. 0105881.
Caillat Christian
Mazoyer Pascale
Fleit, Kain, Gibbons, Gutman, Bongini & Blanco P.L.
Gibbons Jon A.
Jorgenson Lisa K.
Kennedy Jennifer
STMicroelectronics S.A.
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