Process for exactly transferring latent images in photo-resist l

Details Process for exactly transferring latent images in photo-resist l Process for exactly transferring latent images in photo-resist l

1998-12-04

2000-07-25

Elms, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438364, 438400, 438396, H01L 218234

Patent

active

060935987

ABSTRACT:
A semiconductor stacked type dynamic random access memory device has a node contact hole formed in an inter-level insulating layer and a storage electrode held in contact with a source region of an access transistor through the node contact hole, and the node contact hole and the storage electrode are patterned by using a photo-lithography and an etching, wherein a photo-resist mask for the node contact hole is different in thickness from a photo-resist mask for the storage electrode by value equivalent to a half of the period of the periodicity representative of sensitized characteristics of the photo-resist in the presence of an optical standing wave in the photo-resist masks, thereby keeping the nesting tolerance between the two patterns.

REFERENCES:
patent: 4711699 (1987-12-01), Amano
patent: 4800177 (1989-01-01), Nakamae

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