Process for etching oxides in an electromagnetically coupled pla

Details Process for etching oxides in an electromagnetically coupled pla Process for etching oxides in an electromagnetically coupled pla

1997-04-04

1998-06-30

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

216 68, 438729, H01L 2100

Patent

active

057728321

ABSTRACT:
In an apparatus for producing an electromagnetically coupled planar plasma comprising a chamber having a dielectric shield in a wall thereof and a planar coil outside of said chamber and adjacent to said window coupled to a radio frequency source, the improvement whereby a scavenger for fluorine is mounted in or added to said chamber. When a silicon oxide is etched with a plasma of a fluorohydrocarbon gas, the fluorine scavenger reduces the free fluorine radicals, thereby improving the selectivity and anisotropy of etching and improving the etch rate while reducing particle formation.

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