Process for etching oxide films in a sealed photochemical reacto

Details Process for etching oxide films in a sealed photochemical reacto Process for etching oxide films in a sealed photochemical reacto

1992-04-30

1993-08-10

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156657, 156345, B44C 122, C03C 1500, C03C 2506

Patent

active

052345408

ABSTRACT:
A process for etching oxide films on the semiconductor, or other substrates, in a sealed photochemical reactor. Anhydrous hydrogen fluoride (AHF) gas, or other halogen containing gases, and alcohol vapor carried by an inert gas, such as nitrogen, are passed over the oxides to be etched. The UV radiation shines through a window, which passes the UV radiation onto the oxides while the gases are flowing, and enhances and controls etching of the oxides. The UV window is impervious to the etch process gases. The etch rates are modified, providing for improved oxide etching characteristics.

REFERENCES:
patent: 5022961 (1991-06-01), Izumi et al.
patent: 5078832 (1992-01-01), Tanaka
patent: 5112437 (1992-05-01), Watanabe et al.

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