Process for etching dielectric films with improved resist...

Details Process for etching dielectric films with improved resist... Process for etching dielectric films with improved resist...

2002-06-14

2009-06-16

Alanko, Anita K (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S714000, C438S715000, C438S723000, C438S725000, C438S735000, C438S743000, C216S067000, C216S079000, C216S080000, C252S079100

Reexamination Certificate

active

07547635

ABSTRACT:
A process of etching openings in a dielectric layer includes supporting a semiconductor substrate in a plasma etch reactor, the substrate having a dielectric layer and a patterned photoresist and/or hardmask layer above the dielectric layer; supplying to the plasma etch reactor an etchant gas comprising (a) a fluorocarbon gas (CxFyHz, where x≧1, y≧1, and z≧0), (b) a silane-containing gas, hydrogen or a hydrocarbon gas (CxHy, where x≧1 and y≧4), (c) an optional oxygen-containing gas, and (d) an optional inert gas, wherein the flow rate ratio of the silane-containing gas to fluorocarbon gas is less than or equal to 0.1, or the flow rate ratio of the hydrogen or hydrocarbon gas to fluorocarbon gas is less than or equal to 0.5; energizing the etchant gas into a plasma; and plasma etching openings in the dielectric layer with enhanced photoresist/hardmask to dielectric layer selectivity and/or minimal photoresist distortion or striation.

REFERENCES:
patent: 4283249 (1981-08-01), Ephrath
patent: 4340462 (1982-07-01), Koch
patent: 4807016 (1989-02-01), Douglas
patent: 4857140 (1989-08-01), Loewenstein
patent: 4978419 (1990-12-01), Nanda et al.
patent: 5013398 (1991-05-01), Long et al.
patent: 5013400 (1991-05-01), Kurasaki et al.
patent: 5094978 (1992-03-01), Miyagaki et al.
patent: 5201994 (1993-04-01), Nonaka et al.
patent: 5266154 (1993-11-01), Tatsumi
patent: 5300460 (1994-04-01), Collins et al.
patent: 5312518 (1994-05-01), Kadomura
patent: 5338399 (1994-08-01), Yanagida
patent: 5423945 (1995-06-01), Marks et al.
patent: 5556501 (1996-09-01), Collins et al.
patent: 5609720 (1997-03-01), Lenz et al.
patent: 5716485 (1998-02-01), Salimian et al.
patent: 5767021 (1998-06-01), Imai et al.
patent: 5846884 (1998-12-01), Naeem et al.
patent: 5872061 (1999-02-01), Lee et al.
patent: 5888414 (1999-03-01), Collins et al.
patent: 5892286 (1999-04-01), Toyoda et al.
patent: 5965035 (1999-10-01), Hung et al.
patent: 5965463 (1999-10-01), Cui et al.
patent: 6033990 (2000-03-01), Kishimoto et al.
patent: 6068784 (2000-05-01), Collins et al.
patent: 6074959 (2000-06-01), Wang et al.
patent: 6080662 (2000-06-01), Chen
patent: 6090303 (2000-07-01), Collins et al.
patent: 6117786 (2000-09-01), Khajehnouri et al.
patent: 6183655 (2001-02-01), Wang et al.
patent: 6191043 (2001-02-01), McReynolds
patent: 6194325 (2001-02-01), Yang et al.
patent: 6214744 (2001-04-01), Wada
patent: 6217785 (2001-04-01), Collins et al.
patent: 6217786 (2001-04-01), Hills et al.
patent: 6238588 (2001-05-01), Collins et al.
patent: 6251792 (2001-06-01), Collins et al.
patent: 6277758 (2001-08-01), Ko
patent: 6284149 (2001-09-01), Li et al.
patent: 6316167 (2001-11-01), Angelopoulos et al.
patent: 6379872 (2002-04-01), Hineman et al.
patent: 6391790 (2002-05-01), Stoehr et al.
patent: 6762127 (2004-07-01), Boiteux et al.
patent: 6897154 (2005-05-01), Leung et al.
patent: 7132363 (2006-11-01), Yang et al.
patent: 7179757 (2007-02-01), RamachandraRao et al.
patent: 7229930 (2007-06-01), Jain et al.
patent: 7294580 (2007-11-01), Yun et al.
patent: 2001/0001743 (2001-05-01), McReynolds
patent: 2003/0181054 (2003-09-01), Lee et al.
patent: 2003/0232504 (2003-12-01), Eppler et al.
patent: 2004/0171260 (2004-09-01), Choi et al.
patent: 2004/0209469 (2004-10-01), Harada et al.
patent: 2005/0103748 (2005-05-01), Yamaguchi et al.
patent: 2005/0266691 (2005-12-01), Gu et al.
patent: 0050972 (1982-05-01), None
patent: 0305268 (1989-03-01), None
patent: 0496614 (1992-07-01), None
patent: 0553961 (1993-08-01), None
patent: 0777267 (1997-06-01), None
patent: 0889507 (1999-01-01), None
patent: 1041614 (2000-10-01), None
patent: 11-016887 (1999-01-01), None
patent: 11-111680 (1999-04-01), None
patent: 2000340552 (2000-12-01), None
patent: 2001-110784 (2001-04-01), None
patent: 2003/133287 (2003-05-01), None
patent: WO 00-63960 (2001-05-01), None
patent: 03030237 (2003-04-01), None
patent: 2004/003988 (2004-01-01), None
patent: WO 99-57757 (2004-10-01), None
Horiike Y. et al., “High Rate and Highly Selective SIO2 Etching Employing Inductively Coupled Plasma and Discussion on Reaction Kinetics”, Journal of Vacuum Science and Technology: Part A, American Institute of Physics. New York, US, vol. 13, No. 3, Part 1, May 1, 1995, pp. 801-809.
Norstrom H., “Silicon Surface Damage Caused by Reactive Ion Etching in Fluorocarbon Gas Mixtures Containing Hydrogen”, Journal of Vacuum Science and Technology: Part B, American Institute of Physics, New York, US, vol. 9, No. 1, 1991, pp. 34-40.
Kumar M. J. et al., “Selective Reactive Ion Etching of PECVD Silicon Nitride over Amorphous Silicon in CF4/H2 and Nitrogen Containing CF4/H2 Plasma Gas Mixtures”, Solid State Electrics, Elsevier Science Publishers, Barking, GB, vol. 39, No. 1, 1995, pp. 33-37.
Maeda M. et al., “Low Dielectric Constant Amorphous SIBN Ternary Films Prepared by Plasma-Enhanced Deposition”, Japanese Journal of Applied Physics, Publication Office Japanese Journal of Applied Physics., Tokyo, Japan, vol. 26, No. 5, Part 1, May 1, 1987, pp. 660-665.
Norstrom, H. et al., “RIE of SiO2in doped and undoped fluorocarbon plasmas”, Vacuum, Pergamon Press Ltd., Great Britain, vol. 32, No. 12, pp. 737-745, 1982.
Standaert, T.E.F.M. et al., “Patterning of fluorine-, hydrogen-, and carbon-containing SiO2-like low dielectric constant materials in high-density fluorocarbon plasmas: Comparison with SiO2”, Journal of Vacuum Science and Technology A 173(3), May/Jun. 1999, pp. 741-748.
Notification of Transmittal of the International Search Report or the Declaration for PCT/US03/18791 dated Jan. 16, 2004.
Written Opinion dated Mar. 2, 2004 for PCT/US03/18791.
Search Report dated Sep. 14, 2007 and Written Opinion dated Oct. 5, 2007 for SG200608675-5.
Search Report and Examination Report issued Jul. 11, 2008 in corresponding Singapore Application No. 200608686-2.
Written Opinion dated Nov. 11, 2008, in corresponding Singapore Application No. 200608675-5.

Affiliated with

Also associated with

Rating

Process for etching dielectric films with improved resist... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for etching dielectric films with improved resist..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for etching dielectric films with improved resist... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4077101